| Address |
ISIR, Osaka Univ., Mihoga-oka 8-1, Ibaraki, Osaka 567-0047, Japan |
| Tel |
+81-6-6879-8406 |
| Division |
The Institute of Scientific and Indutrial Research |
| E-mail |
emura@sanken.osaka-u.ac.jp |
| Exhibit highlight |
In the basic principle of photovoltaic operation, the spontaneous electric field that polar substances contain is taken advantage of instead of electric field created by the p-n junction. This structure has very high electric field (〜1MV/cm) in comparison with p-n junction (〜10kV/cm), and the layer thickness of the photovoltaic active region is very thin in a few hundred nm, resulting in very short electron-traveling time in the photovoltaic active region. Moreover, no difused region reduces a thermal relaxation and recombination loss very much. This leads that very high photovoltaic power generation efficiency (70~75%)can be realized. The device structure is very simple, and have not any doping basically. |
| categories |
Photovolitaic |
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